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| Semiconductor DP030S PNP Silicon Transistor Features * Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= -0.15V Typ. @IC/IB=-100mA/-10mA) * Suitable for low voltage large current drivers * Excellent hFE Linearity * Complementary pair with DN030S * Switching Application Ordering Information Type NO. DP030S Marking P01 Package Code SOT-23F Outline Dimensions 2.40.1 1.60.1 unit : mm 1 2.90.1 1.90 BSC 3 0.40.05 2 0.150.05 PIN Connections 1. Base 2. Emitter 3. Collector KST-2108-000 0.90.1 0~0.1 1 DP030S Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25C) Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings -15 -12 -5 -300 200 150 -55~150 Unit V V V mA mW C C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat1) VCE(sat2) VBE(sat1) VBE(sat2) fT Cob Test Condition IC=-50A, IE=0 IC=-1mA, IB=0 IE=-50A, IC=0 VCB=-12V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-100mA VCE=-1V, IC=-300mA IC=-100mA, IB=-10mA IC=-300mA, IB=-30mA IC=-100mA, IB=-10mA IC=-300mA, IB=-30mA VCE=-5V, IC=-10mA VCB=-10V, IE=0, f=1MHz Min. Typ. Max. -15 -12 -5 200 70 350 4 -0.1 -0.1 450 -0.2 -0.5 -1.2 -1.7 - Unit V V V A A V Collector-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency Collector output capacitance V V MHz pF KST-2108-000 2 DP030S Electrical Characteristic Curves Fig. 1 PC - Ta Fig. 2 IC-VBE 1V Fig. 3 hFE - IC Fig. 4 IC - VCE Eohhfie Fig. 5 VCE(sat) - IC KST-2108-000 3 |
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